* 12A, 600V(See Note), RDS(on) <0.65Ω@VGS = 10 V
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* RoHS compliant █ Maximum Ratin.

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance,.

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